3-channel analysis technique consisting of optical inspection, photoluminescence and X-ray topography methods for defect inspection of SiC epitaxial wafers has been investigated. The effectiveness of SiC wafer inspection image correction to enable automatic defect analysis is verified. Next, it is shown that the 3-channel analysis technique improves SiC defect inspection accuracy compared to conventional 2-channel analysis one.
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Senzaki et al. (2024) studied this question.
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