This paper describes the fabrication of quantum dot gate (QDG) [Formula: see text]-FETs using GeOx-cladded Ge quantum dot self-assembled on tunnel gate oxide. Experimental I–V characteristics exhibiting 4-states are presented. Simulations are presented for the operation of a viable 8-state SRAM using QDG-FETs.
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Saman et al. (2024) studied this question.
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