GaN-HEMT Switch Based Three Phase Transformerless Inverter with Reduced Passive Filter Design

Due to their higher efficiency and reduced size, three-phase transformerless inverters are developed for PV systems. This transformerless inverter suffers from Common Mode Voltage (CMV) and leakage current issues. Furthermore, it has significant switching losses and complex filter designs. The inverter structures and PWM techniques have been modified to mitigate CMV and leakage current. To reduce switching losses and improve passive filter design, Wide Band Gap (WBG) materials are recommended as a substitute for conventional Si-MOSFET and Si-IGBT switches. SiC-MOSFET and GaN-HEMT switches are commonly used as Wide Band Gap (WBG) material switches. This paper analyses ten switch three-phase transformerless inverter with scalar PWM technique for CMV and leakage current of the configuration. The Si-IGBT switch has been replaced with a GaN-HEMT switch to reduce switching losses and improve filter design. Mathematical analysis for power loss and passive filter design is compared with the Si-IGBT inverter. This paper discusses the simulation results for CMV, leakage current, and THD using MATLAB/Simulink.