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June 13, 2024Semiconductor Science and TechnologyOpen Access

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

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Authors

LHLê Trung HiếuVietnam National University Ho Chi Minh CitySRShivendra K. RathaurNational Yang Ming Chiao Tung UniversityCLChee-How LuPioneer (United States)

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Cite This Study

Hiếu et al. (2024) studied this question.

synapsesocial.com/papers/68e64e77b6db6435875deb4ehttps://doi.org/10.1088/1361-6641/ad57e6
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure2026
  2. 2Performance Analysis of AlGaN/GaN HEMTs with InGaN and Graded InGaN Back-Barrier Structures2026
  3. 3Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate2025 · 4 citations
  4. 4GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers2026 · 3 citations
  5. 5Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon2024