Anti-ambipolar transistors (AATs) are a promising candidate for multivalued logic devices, which are vital for improving the device density and data-handling capabilities of nanoelectronics. Compared with most AATs with {Λ}-shaped transport characteristics, the emerging four-logic-state bi-AATs have a stronger capability for exponentially increasing the integration density. Here, we demonstrate an alternative strategy to achieve bi-anti-ambipolar transport by using the intrinsic electronic properties of two-dimensional (2D) materials. In detail, by breaking symmetry in edge-sharing octahedra, 2D XPS₃ (X = Al,0.2em0exGa,0.2em0exIn,0.2em0exTl) materials exhibit isolated band structures with subgap states near the Fermi level. More importantly, this special electronic feature inspires the design of double subgap tunnel field-effect transistors (TFETs) for realizing bi-anti-ambipolar transport. Through quantum transport simulations, we observe M-shaped I-V curves in the 2D InPS₃ TFET, verifying the feasibility of the device concept. This work broadens the horizon for the development of bi-anti-ambipolar devices in the forthcoming era of big data.
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Yang et al. (2024) studied this question.
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