Analysing CMOS performance: A comprehensive study of operational characteristics in low-temperature environments

This article aims to methodically analyse and consolidate the experimental findings from previous research on the operational behaviour of Complementary Metal-Oxide-Semiconductor (CMOS) technology in low-temperature conditions. Recognizing the extensive array of empirical data available, the focus is on delineating and systematizing the functional attributes of CMOS devices when subjected to such environmental parameters. The study involves a comparative review of diverse scholarly sources, identifying and categorizing the operational features of CMOS in low-temperature scenarios. This endeavour seeks to distil these findings into clear, initial conclusions, drawing upon a comprehensive examination of relevant literature and database compilations. Structurally, the paper commences with an introductory exposition on CMOS, followed by a detailed literature review cantered on its performance in low-temperature contexts, leading to the analysis of collected data and ensuing discussions. The synthesis of these insights aims to enhance the understanding and generalization of CMOS operational dynamics in low-temperature environments, contributing to a cohesive body of knowledge in this specialized field.