This approach improves data processing speed in high performance computing by optimizing carrier mobility, highlighting the significance of low temperature operation.
Low temperature operation Complementary Metal Oxide Semiconductor (CMOS) is a promising method to improve high performance computing after traditional CMOS fails to break through the power wall composed of and heat loss and Moore's Law is pushed to the limits of physical scale and technological capability. This study discusses the increasing of data processing speed of CMOS under low temperature operation. The focus is on carrier concentration and mobility, in addition, two experimental methods and theoretical modeling methods for measuring carrier concentration and mobility are presented. and finally discuss the challenges and opportunities of low temperature CMOS.
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Zhuang et al. (2025) studied this question.
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