P‐15: The Back‐channel Effect in Low Temperature Poly‐Si Thin Film Transistors

This paper addresses the mechanism of the back‐channel effect on TFTs (Thin Film Transistors) and proposes novel methods for characterizing and improving the stability of driving TFT devices, including back‐channel and back‐voltage testing. In comparison to routine sticking image and negative bias temperature stress testing, our methods aim to minimize the impact of intrinsic material fluctuations, allowing for independent measurement of the back‐channel effect on TFT device electrical characteristics. We also offer an enhanced option (N2 Plasma treatment of PI surface), that have been used for better the performance of products.