P‐7.17: Analysis of the Influence Factors of LTPS‐TFT Characteristics on Module Brightness Stability

In this paper, the influence of the type of interface treatment on the p‐Si surface (H 2 or O 2 plasma) and the SiH 4 flow rate of SiO x on the characteristics stability of low‐temperature poly‐crystalline thin film transistors (LTPS‐TFT) has been investigated. The results indicate that H 2 plasma is more effective than O 2 plasma to repair low‐energy‐level defects at the interface of p‐Si layer and gate insulator layer (GI), and thus the threshold voltage (Vth) and subthreshold swing (ss) are smaller. And increasing the SiH 4 flow rate of SiO x from 1900sccm to 3900sccm helps to form a defect‐reduced and more stable p‐Si film. Finally, the brightness degradation test shows that after aging for 24H with L255, the L3 brightness of base sample decreased by almost 32%, while improved sample decreased by only 8%.