In spot beam laser annealing, fiber laser and the polygon scanner‐based optical system play a key role by precisely controlling the laser spot position and linear velocities. Key parameters of the laser crystallization are laser power, spot overlap and line overlap. AFM, Raman, and SEM analyzes are used to evaluate polysilicon crystallization state, optimize process parameters, and understand spot beam annealing mechanism. This paper presents the spot beam annealing system configuration and experimental results for low‐temperature poly‐silicon fabrication.
No takes yet. Share an insight, caveat, or question.
Han et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: