Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified.
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Tateno et al. (2024) studied this question.
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