Carbon Nanotube Field Effect Transistor Technology for Power Reduction

CMOS is the preferred technology choice for silicon-based high-performance digital circuits.Although silicon-based technology continues to expand and explore materials and models for future technologies.Carbon nanotube field-effect transistors (CNTFET) use carbon nanotubes to swap silicon as the channel material.Here 2X1MUX and 4X1MUX are used and compared with CMOS technology.When working with CNTFETs, you will notice that the change in voltage will affect the leakage current and change the process negatively, while the supply voltage will affect the performance of the generator.Use the cadence virtuoso tool for simulation.For CNTFET transistors, periodic analysis shows that the best CNT diameter to provide high power performance for high-speed digital applications is around 1 nm.CNTFETs have the potential to increase efficiency and provide good results.