Ultra-thin and High-quality Pt-Silicidation using CW Laser Annealing Process

We have demonstrated a novel laser annealing process to form a uniform ultra-thin PtSi with a physical thickness of ~ 5 nm and a resistivity of 66.6 μΩ.cm. Comparison with PtSi formed using Rapid Thermal Annealing (RTA) was also performed to show that the laser scanning process was a key to form low resistivity, high-quality, ultra-thin, single crystalline-like Pt silicide.