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September 17, 2026Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsOpen Access

Phase formation and thermal stability of superconducting platinum silicide thin films on silicon

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Authors

TNTharanga Nanayakkara ACAnanya Chattaraj MLMingzhao Liu

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Overview

Experimental study demonstrates robust phase-pure platinum silicide formation on silicon across 300–600 °C, indicating broad thermal processing windows for quantum devices.

Key Points

Investigate phase formation, interface quality, microstructure, and thermal stability of superconducting platinum silicide thin films on silicon under varied annealing conditions.
Fabricated platinum silicide (PtSi) films on silicon substrates across annealing temperatures of 300–600 °C and different annealing durations using rapid thermal processing.
Characterized film microstructure, phase purity, interface roughness, and superconductivity using grazing-incidence x-ray diffraction, x-ray reflectivity, and low-temperature electrical transport measurements.
Phase-pure PtSi formed within minutes at 600 °C and remained stable under extended heating, while 30-second anneals across 300–600 °C yielded consistent microstructure and a superconducting transition temperature near 1 K.
X-ray reflectivity demonstrated that interface roughening is an intrinsic byproduct of the Pt2Si-to-PtSi phase transformation step rather than a consequence of thermal exposure duration or elevated annealing temperatures.

Cite This Study

Nanayakkara et al. (2026) studied this question.

synapsesocial.com/papers/6aabb5fd5f706d05830e47b4 https://doi.org/10.1116/6.0005644

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September 17, 2026Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsOpen Access

Phase formation and thermal stability of superconducting platinum silicide thin films on silicon

View Full Paper

Ask AI

Bookmark

Authors

TNTharanga Nanayakkara ACAnanya Chattaraj MLMingzhao Liu

Discussion

Member takes

Overview

Experimental study demonstrates robust phase-pure platinum silicide formation on silicon across 300–600 °C, indicating broad thermal processing windows for quantum devices.

Key Points

Investigate phase formation, interface quality, microstructure, and thermal stability of superconducting platinum silicide thin films on silicon under varied annealing conditions.
Fabricated platinum silicide (PtSi) films on silicon substrates across annealing temperatures of 300–600 °C and different annealing durations using rapid thermal processing.
Characterized film microstructure, phase purity, interface roughness, and superconductivity using grazing-incidence x-ray diffraction, x-ray reflectivity, and low-temperature electrical transport measurements.
Phase-pure PtSi formed within minutes at 600 °C and remained stable under extended heating, while 30-second anneals across 300–600 °C yielded consistent microstructure and a superconducting transition temperature near 1 K.
X-ray reflectivity demonstrated that interface roughening is an intrinsic byproduct of the Pt2Si-to-PtSi phase transformation step rather than a consequence of thermal exposure duration or elevated annealing temperatures.

Cite This Study

Nanayakkara et al. (2026) studied this question.

synapsesocial.com/papers/6aabb5fd5f706d05830e47b4 https://doi.org/10.1116/6.0005644

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