Development of the radiation-hard MALTA CMOS sensor for tracking applications

The MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) is produced using Tower 180 nm CMOS technology, specifically targeting radiation-hard applications in the HL-LHC and beyond. Several process modifications have resulted in radiation hardness up to 3 × 10¹⁵~1 ~MeV~neq /cm² and time resolution below 2 ns, with uniform charge collection efficiency across the chip formed of 512 × 224 pixels with a size of 36.4 × 36.4~². This is achieved when adopting high-resistivity Czochralski substrates with backside metallisation to obtain a good propagation of the bias voltage. This contribution will show the most recent results obtained on MALTA2 chip demonstrators, including signal efficiency, noise occupancy and time resolution, at different levels of irradiation as well as the performance of the MALTA telescope permanently installed at the SPS at CERN and used in the test beam campaign in 2021-2023.