Investigation of Plasma Gases for Polysilazane Conversion into SiO₂ for Wafer Bonding

The technique of wafer bonding at room temperature is essential for producing various electronic devices. In the conventional method, perhydropolysilazane is converted to Si02 using plasma to successfully bond wafers at room temperatures. However, the effect of plasma on perhydropolysilazane has not been sufficiently investigated. This study evaluates the effect of plasma on perhydropolysilazane surface by elemental analysis. Additionally, we conducted wafer bonding using 02 or N2 plasma gas. The results show that 02 plasma is more effective than N2 plasma for converting perhydropolysilazane into Si02. Additionally, wafer bonding using 02 plasma gas was achieved. These findings suggest new potential for wafer bonding using perhydropolysilazane at room temperature.