Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

In this paper, we have monitored the cycle-to-cycle variation (CCV) of ultra-scaled FinFETs during hot carrier degradation (HCD) and bias temperature instability (BTI) stress. Different measurement speeds have been utilized to separate the intrinsic CCV from the stress-induced CCV. Statistical Vth of nFinFETs shows under the same amount of A Vth, PBTI induces a larger dynamic variability than HCD. Surprisingly, pFinFETs with under much <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vₜₕ</tex> degradation exhibit only a little Vth variation, suggesting its less sensitivity to stress-induced CCV. Furthermore, tremendous experimental data reveal that the oxide trap plays a key role in dynamic variability, especially in aged devices. This study is helpful for the reliability variability-aware device/circuit co-design in advanced technology nodes.