Body Bias Impact on ION Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery

This paper investigates the impact of body bias (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BS</inf> ) on ION degradation in SiGe-channel pMOS without Si-cap for DRAM periphery. Experimental data show SiGe-channel devices have higher ION degradation under V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BS</inf> -stress. In this paper, we investigate the ION degradation mechanisms using TCAD. Narrower bandgap of SiGe-channel causes higher electric field, resulting in higher trap generation at the SiGe– SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface. Different V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> SiGe-channel devices are studied to understand the impact of channel doping on the electric field inside the device.