Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology

In this article, wafer-scale gallium nitride (GaN)-Si(100) monolithic integration material was achieved by transfer printing and self-aligned etching technology. A monolithic heterogeneous integration inverter consists of a normally-OFF Si PMOSFET and a normally-OFF GaN nMOS-HEMT was fabricated on the 2-in wafer-scale GaN-Si(100) integration platform, which overcomes the immaturity of GaN PMOSFETs. The GaN-Si(100) monolithic heterogeneous integration inverter exhibits an excellent low-level noise margin (NM <tex-math notation="LaTeX">L)</tex-math> of 1.69 V and a high-level noise margin (NM <tex-math notation="LaTeX">H)</tex-math> of 0.95 V at a supply voltage ( <tex-math notation="LaTeX">VDD)</tex-math> of 3 V. The output voltage swing <tex-math notation="LaTeX">VSW</tex-math> in the percentage of <tex-math notation="LaTeX">VDD</tex-math> is 100%. The rise and fall times of the fabricated inverter are less than 0.1 <tex-math notation="LaTeX">μ</tex-math> s. The excellent results demonstrate the promising potential of the GaN-Si(100) monolithic heterogeneous integration devices for high-frequency drive and logic integrated circuits applications.