Elucidating the role of Device architecture for Mott-insulator based Memory technology

Emerging memory technologies are driven by the escalating demand for advanced, high-performance, and energy-efficient memory solutions. Traditional technologies, while effective, face challenges in meeting the demands of modern computing and data storage applications. As the demand for enhanced data retrieval speed, reduced energy consumption, and greater scalability grows, emerging memory technologies like Magnetic Random-Access Memory (MRAM), Resistive Random-Access Memory (ReRAM), and Phase-Change Random Access Memory (PCRAM) are becoming increasingly prominent. ReRAM, distinguished by its unique resistive switching mechanism, facilitates reversible transitions between high and low-resistance states, providing a foundation for efficient data storage. A noteworthy aspect of ReRAM is the utilization of Mott insulators, such as VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> , known for their remarkable insulator-to-metal transition (IMT) capabilities. This unique property allows ReRAM to achieve precise and energy-efficient control over resistance states, contributing to its allure as a promising alternative in the ever-evolving landscape of memory technologies.