Structural Features of the Epitaxial Layer of the (GaAs)₁−y−z(Ge₂)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt

This paper presents the results of experimental studies of the structural characteristics of the epitaxial layers of GaAs1−x−yZnSexGey solid solutions grown from a bismuth solution-melt on GaAs substrates with (100) crystallographic orientation. The grown epitaxial film of the GaAs1−x−yZnSexGey solid solution is a single crystal with a sphalerite-like structure with the (100) orientation corresponding to the substrate orientation. It is shown that ZnSe molecules partially replace GaAs molecules in defect-capable regions of the (100) matrix crystal lattice at the high-potential sites.