Improvement of Ga₂O₃ vertical Schottky barrier diode by constructing NiO/Ga₂O₃ heterojunction

The high critical electric field strength of Ga 2 O 3 enables higher operating voltages and reduced switching losses in power electronic devices. Suitable Schottky metals and epitaxial films are essential for further enhancing device performance. In this work, the fabrication of vertical Ga 2 O 3 barrier diodes with three different barrier metals was carried out on an n – -Ga 2 O 3 homogeneous epitaxial film deposited on an n + - β -Ga 2 O 3 substrate by metal−organic chemical vapor deposition, excluding the use of edge terminals. The ideal factor, barrier height, specific on-resistance, and breakdown voltage characteristics of all devices were investigated at room temperature. In addition, the vertical Ga 2 O 3 barrier diodes achieve a higher breakdown voltage and exhibit a reverse leakage as low as 4.82 ×10 −8 A/cm 2 by constructing a NiO/Ga 2 O 3 heterojunction. Therefore, Ga 2 O 3 power detailed investigations into Schottky barrier metal and NiO/Ga 2 O 3 heterojunction of Ga 2 O 3 homogeneous epitaxial films are of great research potential in high-efficiency, high-power, and high-reliability applications.