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An ON-chip vacuum transistor based on electron emission from SiO <tex-math notation="LaTeX">ₓ</tex-math> tunneling diodes formed at the side surface of a thin SiO <tex-math notation="LaTeX">₂</tex-math> film is proposed, where electrons transport in the vacuum channel between the electron emitter and collector electrode is modulated by an underneath gate electrode. The device performances are studied by the finite element simulation method. An on/off current ratio up to <tex-math notation="LaTeX">10⁵</tex-math> and a subthreshold slope of <tex-math notation="LaTeX">~</tex-math> 500 mV/dec are obtained by simulation. Experimentally, a vacuum transistor based on SiO <tex-math notation="LaTeX">ₓ</tex-math> tunneling diodes in a surrounding structure is fabricated, achieving an on/off current ratio of <tex-math notation="LaTeX">10⁴</tex-math> and a subthreshold slope of <tex-math notation="LaTeX">~</tex-math> 5 V/dec. The performance degradation in experiments is mainly attributed to unoptimized device structures.
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He et al. (2024) studied this question.
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