Improved Performance of Oppositely Doped CoreShell Junctionless Nanowire FET Using Gate Material Engineering

The impact of work function variation on Dual Material Gate Oppositely Doped Core-Shell Junctionless Nanowire FET (DMG-ODCS-JLNWFET) is explored in this paper. The variation in surface potential, electric field, band energy, drain current ( ID), leakage current (IOFF), subthreshold slope (SS), transconductance (gₘ), and switching ratio (ION/IOFF) are analyzed. The performance of DMG-ODCS-JLNWFET is also compared with Single Material Gate (SMG) ODCS-JLNWFET. The results demonstrate that the proposed device shows significant advancements, boasting improvements of 18.9%, 73.7%, 26.8%, and 10.8% in ID, IOFF, gₘ, and SS respectively when compared to SMG-ODCS-JLNWFET. These noteworthy enhancements underscore the device's exceptional suitability for both analog and digital applications within the confines of nano-scale dimensions.