Double Metal Gate Macaroni Nanowire FET (DMGM-NFET) for Improved Performance and Off-State Leakage Reduction

A pioneering strategy is introduced to enhance band-to-band tunnelling (BTBT) and diminish gate leakages within a double metal gate macaroni-nanowire field-effect transistor (DMGM-NFET). After fine-tuning the threshold voltage, performance is juxtaposed with that of the single metal gate macaroni nanowire FET (SMGM-NFET), DMG-NFET, and single metal gate nanowire FET (SMG-NFET). A hollow pillar is integrated into the architecture of both the SMGM-NFET and the DMGM-NFET along the channel center. Consequently, the DMGM-NFET exhibits a noteworthy reduction in gate-induced drain leakage current, reaching levels as low as 10-11 A, along with a subthreshold slope that surpasses the optimum value by 9.7 mV/decade. Qualitative analysis indicates that the DMGM-NFET achieves the highest ION/IOFF ratio, surpassing the SMG-NFET by 3109 times, the DMG-NFET by 233 times, and the SMGM-NFET by 2 times. When compared to the others, the DMGM-NFET excels in such metrics as quality factor, Av, VEA, fT, TGF, ION/IOFF ratio, Gd, ID-VG, and ID-VD. The significant improvements in these parameters are attributed to the integration of a dual metal gate for enhanced channel regulation and the incorporation of a vacuum filler at the channel's center, which effectively confines hot electron injections and impedes electron propagation in the OFF-state. These advancements position the DMGM-NFET as an exceptional solution for BTBT applications and for mitigating leakage currents