Charge Transport in Semiconductor Heterogeneous Structure at Oxide Interface by Inserting a Functional Layer

This paper presents a simulated work for analysing the charge transport in heterogeneous structure at oxide interface by inserting a functional layer. Complex oxide interfaces are assumed to be highly promising domain in condensed-matter electronics due to the unique physical characteristics and diverse phenomena observed in semiconductor nanoelectronics-based structures. Magnetization at high Curie temperatures, increased temperature superconductivity, ionic conduction, metal-insulator transitions, and polymorphism are examples of these phenomena. Oxide interfaces between highly correlated electron systems also provide a powerful pathway for manipulating charge, spin, orbital, and lattice degrees of freedom and regulating and enhancing effects through interactions with functional layers. This paper suggests a general method for obtaining non-volatile properties at the oxide interface by inserting a functional layer into a heterogeneous structure. The LaAlO3-SrTiO3 (LAO / STO) complex oxide has been chosen for this research paper.