A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor for Leakage Control and Subthreshold Slope Reduction

We report a novel Hybrid-channel Gate-AlI-Around (GAA) nanosheet field-effect transistor (NSFET) for the first time. By introducing a reverse biased p-i-n sub-channel, the proposed Hybrid-channel NSFET is able to combine the advantages of GAA MOS channel and sub-TFET channel, achieving superior sub-channel leakage control and possible sub-60m V /dec subthreshold slope (SS), thus significantly alleviating the critical issues of parasitic channel leakage and degraded SS in conventional NSFETs. Simulated Hybrid-channel NSFET exhibits comparable leakage current level with NSFET based on Full BDI scheme, yet with excellent immunity to process variations at the same time. A steep minimum SS of 11.38 mV/dec and average SS of 36.67 mV/dec for 6 decades have also been obtained through bandgap engineering of the sub-TFET channel.