Two-Dimensional MOS₂ Based Memristors for Artificial Neural Network

Neuromorphic computing has recently gained significant research interest due to its potential for efficient computing enabled by dense integration of memristive devices. However, few studies have demonstrated neurons and synapses utilizing the same two-dimensional (2D) materials and fabrication process. In this work, we investigate molybdenum disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) treated with thermal oxidation as both volatile memristors (VMs) and non-volatile memristors (NVMs) for neuromorphic applications. For the VM, the devices with the structure of Ag/Ti/MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /Pt devices exhibit low operation voltages, low-variability in threshold voltage. The structure of Pt/Ti/MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /Pt demonstrates gradual set and reset behavior mimicking synaptic plasticity.