PMOS Leakage Reduction Through Sige Morphology & IMP Profile Fine Tune

In the pursuit of reducing the leakage of PMOS, this research investigates methods to enhance the performance of PMOS devices through an analysis of halo dose and SiGe morphology. Experimental results highlight the critical influence of halo dose on device performance, with higher doses leading to improved outcomes. Additionally, a correlation is established between halo depth and SiGe morphology, influencing device characteristics. By precisely adjusting the Ge injection energy, the thickness of the amorphous layer can be finely controlled, facilitating optimal matching between halo depth and SiGe morphology. Notably, experimental investigations reveal significant performance improvements resulting from the optimization of halo dose and SiGe morphology. This study provides valuable insights for enhancing PMOS devices incorporating SiGe and offers practical guidance for effective online control during large-scale production processes.