A 58–110 GHz 4.2 dB Minimum NF CMOS LNA With Broadband Simultaneous Noise and Impedance Matching

This letter presents a hybrid series-shunt LC tank matching technique, which constructs an imaginary-impedance part for impendence (power) matching and cancels the imaginary-impedance deviations caused by the aggravated load and parasitic effects in millimeter-wave (mm-wave) high-frequency band, allowing broadband simultaneous noise and impedance matching (BSNIM) for mm-wave CMOS low-noise amplifier (LNA). The proposed matching network has been synthesized into a triple-coupled transformer-based matching network further to enable a compact and robust solution in differential circuit design. To validate the proposed BSNIM techniques, an <tex-math notation="LaTeX">$E/W$ </tex-math> -band LNA is fabricated with 40-nm CMOS, and achieves less than −10 dB S11 from 58 to 110 GHz and a low noise figure (NF) of 4.2–6.9 dB from 58 to 100 GHz. The peak gain of the LNA is 16.4 dB at 85 GHz with a 3-dB gain bandwidth (BW) from 70 to 91 GHz, while consuming 20.7 mW from 0.9-V supply.