A novel CMOS LNA shows improved bandwidth and gain in 6G upper-mid band applications, suggesting enhanced performance for future wireless technology.
A wideband CMOS low‐noise amplifier (LNA) for 6G upper‐mid band (7–24 GHz) applications is presented. The LNA introduces a novel interstage matching network synthesized from first principles as a fourth‐order bandpass filter to achieve a broad, flat gain response. This filter is realized using a compact triple‐coupled transformer (TCT), which simultaneously provides intrinsic gm‐boosting through a negative feedback path without additional power consumption. The TCT's architecture is systematically designed to create a dual‐resonant characteristic, effectively extending the bandwidth while maintaining high gain. Fabricated in 65‐nm CMOS, the LNA occupies a core area of 0.21 mm 2 . Measurement results show a 3‐dB bandwidth from 11.3 to 19.4 GHz, a peak gain of 10.5 dB, and a noise figure of 1.8–3.8 dB, while consuming only 7.9 mW from a 1‐V supply.
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Kim et al. (2026) studied this question.
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