Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications

In this paper, we present the symmetric BSIM-SOI compact model, tailored for Dynamically Depleted Silicon-on-Insulator (DDSOI) MOSFETs, with a primary focus on optimizing their performance in RF Transmit/Receive (T/R) switch applications. This surface potential-based model offers a comprehensive characterization of device behavior, encompassing both Partial Depletion (PD) and Full Depletion (FD) operation regimes while preserving source-drain symmetry and providing correct representation of higher order harmonics. Experimental validation is performed using advanced SPST RF T/R switch hardware from GlobalFoundries Inc., including detailed performance evaluations of critical parameters, such as On resistance, off capacitance, insertion loss, and isolation.