The pattern size of semiconductor circuits has been shrunk as technical advances continued. It is critical to the photomask which contained a considerably shrunk circuit and ultra-high density pattern for sub–20nm tech devices. Develop process has a great impact on the quality of the photomask manufacturing such as CD uniformity and defect control. In this paper, we discussion two develop optimization cases to improve CDU and to reduce process defects.
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Hsu et al. (2024) studied this question.
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