The improvement of an mc-Si solar cell through reverse bias and high temperature (BT) aging was investigated using laser beam-induced current (LBIC) and electroluminescence (EL) techniques. We demonstrated that the dark current of the cell decreased with increasing aging time, which led to an increase in the maximum power after BT aging. The improvement in the maximum power was presumed to be due to a reduction in the shunt current in the equivalent circuit model, and we found that the recombination centers in the vicinity of the surface decreased with BT aging. Applying a reverse bias and a high temperature successfully improved the solar cells.
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Takeshita et al. (2024) studied this question.
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