Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency

In this study, an uncooled 2D nanohole array PtSi/p-Si Schottky mid-infrared (MIR) photodetector, which is essential for on-chip Si-based low-barrier MIR detectors, is presented. Room temperature operation introduces susceptibility to thermal noise and can impact stability. Through modulation frequency and reverse bias optimization, the stability improved by 7 times at 170 Hz and -3.5