Mg₂Si and ε-FeSi contacts for SWIR narrowband Si based photodetectors

This study investigates the performance of Al/n-Si/Mg 2 Si and Al/n-Si/ε-FeSi self-filtered Schottky photodetectors for SWIR applications. The Mg 2 Si-based structure demonstrates superior spectral stability, with a fixed photoresponse peak at 1045 nm (FWHM 120-140 nm) and intensity 30 mA/W, 105 mA/W and 195 mA/W at 0V, 1V and 5V respectively. The Al/n-Si/ε-FeSi detector shows narrowband behavior only at above 2 V applied bias with peak at ~1040 nm and intensity 92 mA/W and 272 mA/W at 2V and 5V bias, respectively