What question did this study set out to answer?

To evaluate the performance characteristics of a pseudomorphic p-type normal-incidence Ge0.25Si0.75/Si strained-layer quantum well infrared photodetector operating between 20 and 77 K.

August 31, 1992Applied Physics LettersOpen Access

Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K

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Authors

RPR. PeopleAlcatel Lucent (Germany)JBJ. C. BeanStevens Institute of Technology CBC. G. BetheaQuantum Technology Sciences (United States)

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Implication

Experimental characterization demonstrates broadband normal-incidence infrared detection in a pseudomorphic Ge0.25Si0.75/Si strained quantum well, indicating viable silicon-based thermal imaging.

Key Points

To evaluate the performance characteristics of a pseudomorphic p-type normal-incidence Ge0.25Si0.75/Si strained-layer quantum well infrared photodetector operating between 20 and 77 K.
Fabricated a p-type Ge0.25Si0.75/Si strained-layer quantum well structure on a (001) silicon substrate configured for normal optical incidence.
Characterized spectral response, responsivity, and detectivity across temperatures from 20 to 77 K, alongside room-temperature (300 K) Fourier-transform infrared (FTIR) measurements.
Demonstrated a broadband photoresponse spanning 8–14 μm, with a typical responsivity of ∼0.04 A/W at λ = 10.8 μm over 20–77 K.
Measured a peak detectivity D*λ of 3.3 × 10^9 cm·√Hz/W at −2.4 V bias and 77 K for λ = 10.8 μm without a cold shield.
Obtained a room-temperature quantum efficiency of η ≈ 3.1% at peak wavelength λp ≈ 8 μm.

Cite This Study

People et al. (1992) studied this question.

synapsesocial.com/papers/6a83eb6b4f77243e16b05cf5 https://doi.org/10.1063/1.107688

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Implication

Experimental characterization demonstrates broadband normal-incidence infrared detection in a pseudomorphic Ge0.25Si0.75/Si strained quantum well, indicating viable silicon-based thermal imaging.

Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K

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Implication

Key Points

Cite This Study

Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K

Discussion

Member takes

Implication

Key Points

Cite This Study

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