Quasi-open circuit response times of single- and multi-junction InGaAs photonic power converters

Photonic power converters provide an emerging alternative to traditional metallic cabling due to their immunity to electromagnetic interference and for minimizing fire hazards as well as their ability to wirelessly power loads. In this work, we study the electrical response as a function of laser power in single and multi-junction In0.53Ga0,47As-based structures using current–voltage and impedance spectroscopy techniques. The resistance, capacitance, and quasi-open-circuit response times are discussed. Estimated values for single- and ten-junction devices were 314 and 911 ns, respectively, measured under 1520 nm laser radiation with an irradiance of 88 mW cm−2. A methodology with analytical modeling is proposed for comparing single- and multi-junction devices based on the average sub-cell performance. Our analysis provides useful information for the optimization of multi-junction photonic power converters in applications where the device response time is relevant such as simultaneous power and data transfer applications.