Characterizations of high-voltage vertically-stacked GaAs laser power converter

This is the authors' abstract. We don't add key points for this paper.

Six-junction vertically-stacked GaAs laser power converters (LPCs) with n + -GaAs/p + -Al 0.37 Ga 0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage ( I–V ) characteristics under 808 nm laser illumination, and a maximum conversion efficiency η c of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.