Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory

Resistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way. Here, we designed and developed the non-stoichiometric resistive-switching memory device (Ti/SiOx/TiNx) that entirely consists of bio-compatible, non-toxic, and inexpensive materials by using the simple microfabrication techniques. In view of the strong demand for memories that can be co-located with or embedded in computation elements (for memory-centric or non-von Neumann computing hardware), we thoroughly characterized the non-stoichiometric, low-cost silicon oxide RRAM device in terms of both cycle-to-cycle and device-to-device variabilities. Our device features variability characteristics comparable to the state-of-the-art RRAM device based on metal oxides and other complex heterostructures. Intermediate resistance states were also straightforwardly obtained by applying relatively high compliance currents.