Molecular Dynamics Simulation Study on the Evolution Law of Subsurface Microdamage Extension on Silicon Wafers Under Different Abrasive Inclination Angles

To investigate the effects of varying grinding angles on surface andsubsurface microdamage in silicon wafers, a combined method integrating nanogrinding experiments and numerical simulations is proposed. A systematic analysis of surface roughness, surface morphology, and subsurface damage mechanisms during the silicon wafer grinding process is conducted based on molecular dynamics. Focusing on the characteristics of grinding angle‐induced surface damage in silicon wafers, mathematical models are established to correlate grinding angles with tangential forces, dislocation evolution, and crystalline structure changes. Key parameters, including tangential force, dislocation density, and crystalline phase transformations under various grinding angles, are systematically collected and analyzed. Comprehensive analysis indicates that at a 30° grinding angle, the damage layer thickness is merely 8.0 nm, representing a 27.9% reduction compared to the 45° angle. Concurrently, the surface roughness remains at 0.012965, demonstrating a 15.1% improvement over the 45° angle. Although the roughness at 15° is marginally lower, its material removal accumulation height is significantly less than the 43.8 Å recorded at 30°. Consequently, the 30° grinding angle represents the optimal compromise between low damage and high efficiency during silicon wafer grinding. This provides crucial theoretical justification and quantitative support for process optimization.