December 8, 2025ACS Applied Materials & Interfaces

Thickness-Induced Crystal Orientation Regulation in a Magnetron-Sputtered GaSb Buffer Layer for High-Performance InAs/GaSb Photodetectors

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Authors

JLJunhong Lv MZMin Zhang YWYujuan Wu

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Implication

This investigation shows crystallization impacts specific detectivities in InAs/GaSb photodetectors, suggesting improved infrared detection performance.

Key Points

A dark current density of 1.1 × 10^-3 A/cm^2 was observed at room temperature in InAs/GaSb photodetectors.
Under 1310 and 1550 nm illumination, the device exhibited specific detectivities of 7.04 × 10^10 and 1.84 × 10^11 Jones.
Observational analysis shows that magnetron sputtering adjustments improve morphology and crystallization quality of GaSb films.
These findings imply that optimized buffer layers can enhance the performance of III-V heterojunction devices.

Cite This Study

Lv et al. (2025) studied this question.

synapsesocial.com/papers/69401f062d562116f28f9f2e https://doi.org/10.1021/acsami.5c20039

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Implication

This investigation shows crystallization impacts specific detectivities in InAs/GaSb photodetectors, suggesting improved infrared detection performance.

Thickness-Induced Crystal Orientation Regulation in a Magnetron-Sputtered GaSb Buffer Layer for High-Performance InAs/GaSb Photodetectors

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Cite This Study

Thickness-Induced Crystal Orientation Regulation in a Magnetron-Sputtered GaSb Buffer Layer for High-Performance InAs/GaSb Photodetectors

Discussion

Member takes

Implication

Key Points

Cite This Study

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