Dynamically Tunable Pseudo-Enhancement-Load Inverters Based on High-Performance InAlZnO Thin-Film Transistors

Oxide transistors have attracted significant interest in the field of integrated circuits (ICs). Among various oxide semiconductors, InAlZnO (IAZO) stands out as a promising candidate due to its potential for high mobility and excellent stability. In this work, we fabricate high-performance IAZO transistors with a field-effect mobility of 56.60 cm2/V·s, a subthreshold swing of 82.59 mV/decade, an on-to-off current ratio over 107, and a small threshold voltage shift of 0.09 V and −0.03 V under positive and negative bias stress, respectively. Based on these transistors, Pseudo-Enhancement-Load (PEL) inverters were constructed. An adjustable bias voltage (VBIAS) was also introduced as an additional control parameter, which allows for flexible control of the trade-off between circuit performance and power consumption. The resulting inverters achieve a balance between static and dynamic performance, exhibiting a voltage gain of 1.83 V/V and a relatively low power consumption of 2.58 × 10−6 W (VBIAS = 1.0 V). Our work demonstrates the potential of IAZO transistor-based PEL inverters for high-performance, low-power oxide IC applications.