Microsized subsurface modification of mono-crystalline silicon via non-linear absorption

We introduce a novel method of optically inducing microsized subsurface structures using non-linear absorption of near infrared light in mono-crystalline silicon. We discuss the physical processes such as multi-photon absorption and self focussing in the material. The results presented in this paper demonstrate a new method of subsurface modifications in silicon and may open up novel avenues for optical devices embedded in silicon and optical process for the separation of wafers from their ingots.