Analysis compares linearity performance and harmonic distortion in various advanced CMOS devices, suggesting JL FinFET is superior.
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device shows best performance for both cases.
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Datta et al. (2025) studied this question.
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