We introduce a new sustainable and scalable technique to manufacture nano and microelectronics additively. The technique eliminates etching, vacuum deposition, and other chemically intensive processing by utilizing direct assembly of nanoscale particles or other nanomaterials at room temperature and atmospheric pressure onto an interposer, wafer, or board. The presented technology enables the printing of crystalline conductors and semiconductors. The technology enables the additive manufacturing of passive and active components at the nano and microscale using a purely additive (directed assembly enabled) process utilizing inorganic semiconductors, metals, and dielectrics nanoparticles. The process demonstrates the manufacturing of transistors with an on/off ratio greater than 106. This new technology enables the fabrication of nanoelectronics and electronic components while reducing the cost by 10-100 times and can print 1000 faster and 1000 smaller (down to 25nm) structures than ink-jet-based printing. Printed applications such as transistors, diodes, display, and all carbon electronics, and sensors at the micro and nanoscale using inorganic and organic materials will be presented. Nano OPS introduced the world’s first Nanoscale fully automated printing system prototype with built-in alignment and registration. Results showing the full printing of EMIB-like structures for chiplets and passive and active components will demonstrate high-throughput printing of interconnects and circuit components at a scale equal to or less than 2 microns. Fully additively manufactured capacitors printed on silicon and sapphire substrates will be presented. The results will show printed capacitors ranging from 20 x 20 µm up to 5000 x 5000 µm with capacitance of femto Farad to nano Farads at different frequencies up to one MHz. The results will show additively printed logic gates such as NAND and MOSFET with high on/off ratios. This new Fab-in-a-Box platform is designed to print electronics and products with minimum features down to 600 nm for several advanced packaging applications.
Ahmed Busnaina (Mon,) studied this question.