Ferroelectric‐Enhanced Self‐Driven Solar‐Blind Photodetector in the GaN‐In ₂ Se ₃ p‐n Junction

Solar‐blind ultraviolet (SBUV) photodetectors have significant applications in fields such as missile warning and fire detection, due to their extremely low background noise. However, the SBUV photodetectors still face problems such as slow speed and low detectivity, which have hindered the commercialization process. Here, we designed a self‐driven GaN‐In 2 Se 3 p‐n junction photodetector with high performance, leveraging the synergy of the built‐in electric field and ferroelectric polarization. At a bias voltage of 0 V, the GaN‐In 2 Se 3 photodetector exhibit excellent self‐driven performance in the SBUV region (255 nm light) with responsivity of 54.95 mA/W and detectivity of 1.66 × 10 12 Jones. When a bias voltage of 10 V was applied, the responsivity and detectivity could reach 12,676 A/W and 1.72 × 10 15 Jones, respectively. Moreover, the 5 × 5 array imaging demonstrates its capacity for large‐scale integration. This work indicates that the GaN‐In 2 Se 3 p‐n junction has great potential for development in the field of SBUV photodetectors.