High Dynamic Range 120 dB Ga ₂ O ₃ ‐In ₂ Se ₃ Photodetector Array by Ferroelectric Polarization Enhancement

Gallium oxide‐based photodetectors have specialized applications in both civilian and military fields due to their excellent spectral selectivity for solar‐blind ultraviolet (SBUV) light. However, gallium oxide photodetectors still face challenges in weak‐light detection capability, which hinders their further commercialization. Here, we devised a Ga 2 O 3 ‐In 2 Se 3 single‐crystal van der Waals heterojunction photodetector by using the polarization modulation effect of ferroelectric semiconductors. Under illumination with a 255 nm light, the Ga 2 O 3 ‐In 2 Se 3 photodetector achieves an on/off ratio of 712,434 and a detectivity of 1.6 × 10 14 Jones, with a linear dynamic range (LDR) of 120 dB. Furthermore, we fabricated a 5×5 array and all photodetectors exhibit consistent optoelectronic performance, indicating the imaging application potential of the array. This work provides novel insights for ferroelectric‐enhanced solar‐blind ultraviolet detectors.