Demonstrates enhanced quantum efficiency in p-type GaAs surfaces through thermal pretreatments and NEA activation, suggesting ideal surface conditions.
Quantum efficiency (Q.E.) evolution on p-type GaAs surfaces during the negative electron affinity (NEA) activation process has been discussed based on repeated sequence of the thermal pretreatments and the NEA activations. We have realized higher Q.E. by the pretreatment at various temperatures in combination with the successive NEA activation process. It is considered that existence of surface residues lead to formation of efficient electron emission sites during NEA activation. We have also discussed surface morphological effects for Q.E.
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Inagaki et al. (2016) studied this question.
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