Analysis demonstrates variations in desorption peaks in NEA-GaAs surfaces, indicating potential impacts on quantum efficiency.
Temperature programmed desorption (TPD) with a quadrupole mass spectrometer (QMS) were carried out on negative electron affinity (NEA) surfaces formed by alternating supply of Cs and O_2 onto GaAs substrate. A number of Cs^133 desorption peaks were observed and the lowest desorption peak appeared at the same temperature range of degradation of quantum efficiency (QE). It was found that intensity of Cs^+, As^+, and Ga-oxide peaks varied depending on conditions of thermal treatment and NEA activation sequence.
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Inagaki et al. (2017) studied this question.
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